component
BCD7N65
Public Made by Adomby adom
baocheng Shandong Baocheng Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bcd7n65: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -21,6 +21,33 @@ BCD7N65 from baocheng Shandong Baocheng Elec, in a TO-252. Pinout and pin descri | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |+| Gate-Source voltage | VGSS | -30 | | 30 | V | | 1 |+| Continuous drain current | ID | | | 7 | A | TC = 25°C | 1 |+| Continuous drain current | ID | | | 4.3 | A | TC = 100°C | 1 |+| Pulsed drain current | IDM | | | 28 | A | | 1 |+| Avalanche energy, single pulse | EAS | | | 352 | mJ | | 1 |+| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |+| Power Dissipation TO-252 | PD | | | 100 | W | TC = 25°C | 1 |+| Operating junction and storage temperature range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Continuous diode forward current | IS | | | 7 | A | | 1 |+| Diode pulse current | IS,pulse | | | 28 | A | | 1 |+| Thermal resistance, junction-to-case (TO-252) | RθJC | | 1.25 | | °C/W | | 1 |+| Thermal resistance, junction-to-ambient (TO-252) | RθJA | | 110 | | °C/W | | 1 |+| Drain-source breakdown voltage | BVDSS | 650 | | | V | VGS=0 V, ID=250 uA | 2 |+| Gate threshold voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250 uA | 2 |+| Drain cut-off current (Tj = 25°C) | IDSS | | | 1 | μA | VDS=650 V, VGS=0 V, Tj = 25°C | 2 |+| Gate leakage current, forward | IGSSF | | | 100 | nA | VGS=30 V, VDS=0 V | 2 |+| Gate leakage current, reverse | IGSSR | | | -100 | nA | VGS=-30 V, VDS=0 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 1.2 | 1.4 | Ω | VGS=10 V, ID=3.5 A | 2 |+| Diode forward voltage | VSD | | 0.85 | 1.5 | V | VGS=0 V, IF=7 A | 2 |+ ## CAD (KiCad official) - Symbol: `BCD7N65`
page.json+248−1@@ -148,6 +148,253 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c95ef0a995dbc014",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.3,+ "conditions": "TC = 100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 352,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation TO-252",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous diode forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case (TO-252)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.25,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient (TO-252)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 110,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0 V, ID=250 uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS=VGS, ID=250 uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain cut-off current (Tj = 25°C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=650 V, VGS=0 V, Tj = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current, forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30 V, VDS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current, reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS=-30 V, VDS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": 1.4,+ "conditions": "VGS=10 V, ID=3.5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.5,+ "conditions": "VGS=0 V, IF=7 A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +436,4 @@ "visibility": { "public": true }-}+}