component
BC857
Public Made by Adomby adom
ST Semtech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc857: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ BC857 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| DC current gain, Group A | hFE | 125 | | 250 | | at -VCE = 5 V, -IC = 2 mA | 2 |+| DC current gain, Group B | hFE | 220 | | 475 | | at -VCE = 5 V, -IC = 2 mA | 2 |+| DC current gain, Group C | hFE | 420 | | 800 | | at -VCE = 5 V, -IC = 2 mA | 2 |+| Collector base cutoff current | -ICBO | | | 15 | nA | at -VCB = 30 V | 2 |+| Collector base breakdown voltage, BC857/BC860 | -V(BR)CBO | 50 | | | V | at -IC = 10 µA | 2 |+| Collector emitter breakdown voltage (CES), BC857/BC860 | -V(BR)CES | 50 | | | V | at -IC = 10 µA | 2 |+| Collector emitter breakdown voltage (CEO), BC857/BC860 | -V(BR)CEO | 45 | | | V | at -IC = 10 mA | 2 |+| Emitter base breakdown voltage | -V(BR)EBO | 5 | | | V | at -IE = 1 µA | 2 |+| Collector emitter saturation voltage | -VCE(sat) | | | 0.3 | V | at -IC = 10 mA, -IB = 0.5 mA | 2 |+| Collector emitter saturation voltage | -VCE(sat) | | | 0.65 | V | at -IC = 100 mA, -IB = 5 mA | 2 |+| Base emitter on voltage | -VBE(on) | 0.6 | | 0.75 | V | at -VCE = 5 V, -IC = 2 mA | 2 |+| Base emitter on voltage | -VBE(on) | | | 0.82 | V | at -VCE = 5 V, -IC = 10 mA | 2 |+| Current gain bandwidth product | fT | 100 | | | MHz | at -VCE = 5 V, -IC = 10 mA, f = 100 MHz | 2 |+| Collector output capacitance | Cob | | | 6 | pF | at -VCB = 10 V, f = 1 MHz | 2 |+| Collector base voltage, BC857/BC860 | -VCBO | | | 50 | V | | 1 |+| Collector emitter voltage, BC857/BC860 | -VCEO | | | 45 | V | | 1 |+| Emitter base voltage | -VEBO | | | 5 | V | | 1 |+| Collector current | -IC | | | 100 | mA | | 1 |+| Peak collector current | -ICM | | | 200 | mA | | 1 |+| Power dissipation | Ptot | | | 200 | mW | | 1 |+| Junction temperature | Tj | | | 150 | °C | | 1 |+| Storage temperature range | Tstg | -65 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `BC857`
page.json+272−1@@ -149,6 +149,277 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4ff3aaeb20421474",+ "rows": [+ {+ "name": "DC current gain, Group A",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 125,+ "typ": null,+ "max": 250,+ "conditions": "at -VCE = 5 V, -IC = 2 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain, Group B",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 220,+ "typ": null,+ "max": 475,+ "conditions": "at -VCE = 5 V, -IC = 2 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain, Group C",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 420,+ "typ": null,+ "max": 800,+ "conditions": "at -VCE = 5 V, -IC = 2 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector base cutoff current",+ "symbol": "-ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "at -VCB = 30 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector base breakdown voltage, BC857/BC860",+ "symbol": "-V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "at -IC = 10 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector emitter breakdown voltage (CES), BC857/BC860",+ "symbol": "-V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "at -IC = 10 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector emitter breakdown voltage (CEO), BC857/BC860",+ "symbol": "-V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 45,+ "typ": null,+ "max": null,+ "conditions": "at -IC = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter base breakdown voltage",+ "symbol": "-V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "at -IE = 1 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector emitter saturation voltage",+ "symbol": "-VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "at -IC = 10 mA, -IB = 0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector emitter saturation voltage",+ "symbol": "-VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.65,+ "conditions": "at -IC = 100 mA, -IB = 5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base emitter on voltage",+ "symbol": "-VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": null,+ "max": 0.75,+ "conditions": "at -VCE = 5 V, -IC = 2 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base emitter on voltage",+ "symbol": "-VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.82,+ "conditions": "at -VCE = 5 V, -IC = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current gain bandwidth product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "at -VCE = 5 V, -IC = 10 mA, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector output capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "at -VCB = 10 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector base voltage, BC857/BC860",+ "symbol": "-VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector emitter voltage, BC857/BC860",+ "symbol": "-VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter base voltage",+ "symbol": "-VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector current",+ "symbol": "-IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak collector current",+ "symbol": "-ICM",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +461,4 @@ "visibility": { "public": true }-}+}