component
BC848BLT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
bc848blt1g: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
2 files changed
+327−1
README.md+31@@ -21,6 +21,37 @@ BC848BLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage (BC848A,B,C, BC849B,C) | V(BR)CEO | 30 | | | V | IC = 10 mA | 2 |+| Collector-Base Breakdown Voltage (BC848A,B,C, BC849B,C) | V(BR)CBO | 30 | | | V | IC = 10 A | 2 |+| Emitter-Base Breakdown Voltage (BC848A,B,C, BC849B,C) | V(BR)EBO | 5 | | | V | IE = 1.0 A | 2 |+| Collector Cutoff Current | ICBO | | | 15 | nA | VCB = 30 V | 2 |+| Collector Cutoff Current | ICBO | | | 5 | A | VCB = 30 V, TA = 150°C | 2 |+| DC Current Gain (BC848B) | hFE | 200 | 290 | 450 | | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.9 | V | IC = 100 mA, IB = 5.0 mA | 2 |+| Base-Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Base-Emitter Voltage | VBE(on) | | | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |+| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 |+| Output Capacitance | Cobo | | | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |+| Noise Figure (BC848A,B,C) | NF | | | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 2 |+| Collector-Emitter Voltage (BC848) | VCEO | | | 30 | Vdc | | 1 |+| Collector-Base Voltage (BC848) | VCBO | | | 30 | Vdc | | 1 |+| Emitter-Base Voltage (BC848) | VEBO | | | 5 | Vdc | | 1 |+| Collector Current - Continuous | IC | | | 100 | mAdc | | 1 |+| Total Device Dissipation FR-5 Board | PD | | | 225 | mW | TA = 25°C | 1 |+| Total Device Dissipation Alumina Substrate | PD | | | 300 | mW | TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 board (Note 1) | 1 |+| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina substrate (Note 2) | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `BC848BLT1G`
page.json+296−1@@ -149,6 +149,301 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a01affdde0271e35",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage (BC848A,B,C, BC849B,C)",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage (BC848A,B,C, BC849B,C)",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage (BC848A,B,C, BC849B,C)",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE = 1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VCB = 30 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VCB = 30 V, TA = 150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (BC848B)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 200,+ "typ": 290,+ "max": 450,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "IC = 10 mA, IB = 0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "IC = 100 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "IC = 10 mA, IB = 0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.9,+ "conditions": "IC = 100 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": 580,+ "typ": 660,+ "max": 700,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 770,+ "conditions": "IC = 10 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cobo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = 10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure (BC848A,B,C)",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage (BC848)",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage (BC848)",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage (BC848)",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation FR-5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (FR-5 Board)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 board (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Alumina Substrate)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina substrate (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "thermal",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +485,4 @@ "visibility": { "public": true }-}+}