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bc846bm3t5g: specified limits as data (metadata.characteristics, 26 rows from the datasheet)

Ray ·8b3a689d31 ·17d ago ·parent 5c853dc
2 files changed +353−1
README.md+33
@@ -21,6 +21,39 @@ BC846BM3T5G from onsemi, in a SOT-723. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector−Emitter Breakdown Voltage | V(BR)CEO | 65 |  |  | V | IC = 10 mA | 2 |+| Collector−Emitter Breakdown Voltage | V(BR)CES | 80 |  |  | V | IC = 10 µA, VEB = 0 | 2 |+| Collector−Base Breakdown Voltage | V(BR)CBO | 80 |  |  | V | IC = 10 µA | 2 |+| Emitter−Base Breakdown Voltage | V(BR)EBO | 6 |  |  | V | IE = 1.0 µA | 2 |+| Collector Cutoff Current | ICBO |  |  | 15 | nA | VCB = 30 V | 2 |+| Collector Cutoff Current | ICBO |  |  | 5 | µA | VCB = 30 V, TA = 150°C | 2 |+| DC Current Gain | hFE | 200 | 290 | 450 |  | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Collector−Emitter Saturation Voltage | VCE(sat) |  |  | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |+| Collector−Emitter Saturation Voltage | VCE(sat) |  |  | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |+| Base−Emitter Voltage | VBE(on) | 550 | 645 | 700 | mV | IC = 1.0 mA, VCE = 5.0 V | 2 |+| Base−Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Base−Emitter Voltage | VBE(on) |  |  | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |+| Current−Gain − Bandwidth Product | fT | 100 |  |  | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 |+| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |+| Noise Figure | NF |  |  | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz | 2 |+| Collector−Emitter Voltage | VCEO |  |  | 65 | Vdc |  | 1 |+| Collector−Base Voltage | VCBO |  |  | 80 | Vdc |  | 1 |+| Emitter−Base Voltage | VEBO |  |  | 6 | Vdc |  | 1 |+| Collector Current − Continuous | IC |  |  | 100 | mAdc |  | 1 |+| Total Device Dissipation | PD |  |  | 265 | mW | FR−5 Board (Note 1), TA = 25°C | 1 |+| Derate above 25°C (FR−5 Board) | PD |  |  | 2.1 | mW/°C | FR−5 Board (Note 1), derate above 25°C | 1 |+| Total Device Dissipation (Alumina Substrate) | PD |  |  | 640 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 |+| Derate above 25°C (Alumina Substrate) | PD |  |  | 5.1 | mW/°C | Alumina Substrate (Note 2), derate above 25°C | 1 |+| Thermal Resistance, Junction to Ambient | RθJA |  |  | 470 | °C/W | FR−5 Board (Note 1) | 1 |+| Thermal Resistance, Junction to Ambient | RθJA |  |  | 195 | °C/W | Alumina Substrate (Note 2) | 1 |+| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |+ ## CAD (KiCad official)  - Symbol: `BC846BM3T5G`
page.json+320−1
@@ -150,6 +150,325 @@       "Package": "SOT-723",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "262f7c75ee683dc8",+      "rows": [+        {+          "name": "Collector−Emitter Breakdown Voltage",+          "symbol": "V(BR)CEO",+          "kind": "electrical",+          "unit": "V",+          "min": 65,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector−Emitter Breakdown Voltage",+          "symbol": "V(BR)CES",+          "kind": "electrical",+          "unit": "V",+          "min": 80,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 µA, VEB = 0",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector−Base Breakdown Voltage",+          "symbol": "V(BR)CBO",+          "kind": "electrical",+          "unit": "V",+          "min": 80,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Emitter−Base Breakdown Voltage",+          "symbol": "V(BR)EBO",+          "kind": "electrical",+          "unit": "V",+          "min": 6,+          "typ": null,+          "max": null,+          "conditions": "IE = 1.0 µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector Cutoff Current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "VCB = 30 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector Cutoff Current",+          "symbol": "ICBO",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 5,+          "conditions": "VCB = 30 V, TA = 150°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 200,+          "typ": 290,+          "max": 450,+          "conditions": "IC = 2.0 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector−Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.25,+          "conditions": "IC = 10 mA, IB = 0.5 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector−Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.6,+          "conditions": "IC = 100 mA, IB = 5.0 mA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base−Emitter Voltage",+          "symbol": "VBE(on)",+          "kind": "electrical",+          "unit": "mV",+          "min": 550,+          "typ": 645,+          "max": 700,+          "conditions": "IC = 1.0 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base−Emitter Voltage",+          "symbol": "VBE(on)",+          "kind": "electrical",+          "unit": "mV",+          "min": 580,+          "typ": 660,+          "max": 700,+          "conditions": "IC = 2.0 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base−Emitter Voltage",+          "symbol": "VBE(on)",+          "kind": "electrical",+          "unit": "mV",+          "min": null,+          "typ": null,+          "max": 770,+          "conditions": "IC = 10 mA, VCE = 5.0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Current−Gain − Bandwidth Product",+          "symbol": "fT",+          "kind": "electrical",+          "unit": "MHz",+          "min": 100,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Output Capacitance",+          "symbol": "Cobo",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "VCB = 10 V, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Noise Figure",+          "symbol": "NF",+          "kind": "electrical",+          "unit": "dB",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector−Emitter Voltage",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 65,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector−Base Voltage",+          "symbol": "VCBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Emitter−Base Voltage",+          "symbol": "VEBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 6,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector Current − Continuous",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "mAdc",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 265,+          "conditions": "FR−5 Board (Note 1), TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Derate above 25°C (FR−5 Board)",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW/°C",+          "min": null,+          "typ": null,+          "max": 2.1,+          "conditions": "FR−5 Board (Note 1), derate above 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation (Alumina Substrate)",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 640,+          "conditions": "Alumina Substrate (Note 2), TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Derate above 25°C (Alumina Substrate)",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW/°C",+          "min": null,+          "typ": null,+          "max": 5.1,+          "conditions": "Alumina Substrate (Note 2), derate above 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction to Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 470,+          "conditions": "FR−5 Board (Note 1)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction to Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 195,+          "conditions": "Alumina Substrate (Note 2)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction and Storage Temperature Range",+          "symbol": "TJ, Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -191,4 +510,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}