← Commit history

Publish 0.1.1

Ray ·dd8e34802b · ·parent 0a28093
2 files changed +382−10
package.json+375−4
@@ -1,6 +1,6 @@ {   "slug": "auirfr3710ztrl",-  "version": "0.1.0",+  "version": "0.1.1",   "type": "component",   "description": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",   "tags": [@@ -29,7 +29,8 @@     "viewers/footprint.html",     "auirfr3710ztrl-hero.glb",     "auirfr3710ztrl-hero.overlay.json",-    "auirfr3710ztrl-etched.glb"+    "auirfr3710ztrl-etched.glb",+    "auirfr3710ztrl-etched.step"   ],   "component": {     "mpn": "AUIRFR3710ZTRL",@@ -43,7 +44,7 @@       "symbol": "auirfr3710ztrl.kicad_sym",       "footprint": "auirfr3710ztrl.kicad_mod",       "model_3d": "auirfr3710ztrl-hero.glb",-      "model_3d_plain": "auirfr3710ztrl-etched.glb",+      "model_3d_plain": "auirfr3710ztrl.glb",       "model_3d_step": "auirfr3710ztrl-etched.step",       "model_3d_step_plain": "auirfr3710ztrl.step",       "lbr": "auirfr3710ztrl.lbr"@@ -160,5 +161,375 @@         "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"       }     ]-  }+  },+  "title": "AUIRFR3710ZTRL",+  "brief": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "metadata": {+    "specs": {+      "Manufacturer": "Infineon Technologies",+      "Package": "DPAK",+      "Category": "Triode/MOS Tube/Transistor",+      "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "a458f80217fb137bee8170044ab28971c937c5d505c8d058f6844daf488bd5e9",+      "rows": [+        {+          "name": "Continuous Drain Current (Silicon Limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 56,+          "conditions": "TC = 25°C, VGS @ 10V (Silicon Limited)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (Silicon Limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 39,+          "conditions": "TC = 100°C, VGS @ 10V (Silicon Limited)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (Package Limited)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 42,+          "conditions": "TC = 25°C, VGS @ 10V (Package Limited)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 220,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 140,+          "conditions": "TC = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Linear Derating Factor",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "W/°C",+          "min": null,+          "typ": null,+          "max": 0.95,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulse Avalanche Energy (Thermally Limited)",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulse Avalanche Energy Tested Value",+          "symbol": "EAS (Tested)",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction Temperature",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 175,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Soldering Temperature",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "for 10 seconds (1.6mm from case)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Case Thermal Resistance",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 1.05,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance (PCB Mount)",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "PCB mount",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 110,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Breakdown Voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 100,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0V, ID = 250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source On-Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "m",+          "min": null,+          "typ": 15,+          "max": 18,+          "conditions": "VGS = 10V, ID = 33A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS = VGS, ID = 250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": 39,+          "typ": null,+          "max": null,+          "conditions": "VDS = 25V, ID = 33A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "VDS = 100V, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 250,+          "conditions": "VDS = 100V, VGS = 0V, TJ = 125°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Forward Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "VGS = 20V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Reverse Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": -200,+          "conditions": "VGS = -20V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 69,+          "max": 100,+          "conditions": "ID = 33A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous Source Current (Body Diode)",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 56,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Source Current (Body Diode)",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 220,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.3,+          "conditions": "TJ = 25°C, IS = 33A, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse Recovery Time",+          "symbol": "trr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 35,+          "max": 53,+          "conditions": "TJ = 25°C, IF = 33A, VDD = 50V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse Recovery Charge",+          "symbol": "Qrr",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 41,+          "max": 62,+          "conditions": "di/dt = 100A/µs",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Breakdown Voltage Temperature Coefficient",+          "symbol": "V(BR)DSS/TJ",+          "kind": "temperature_coefficient",+          "unit": "V/°C",+          "min": null,+          "typ": 0.088,+          "max": null,+          "conditions": "Reference to 25°C, ID = 1mA",+          "source_page": 2,+          "source": "datasheet"+        }+      ]+    }+  },+  "discovery_triggers": [+    "auirfr3710ztrl"+  ],+  "discovery_pitch": "AUIRFR3710ZTRL (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",+  "visibility": "public" }
page.json+7−6
@@ -4,7 +4,7 @@   "slug": "auirfr3710ztrl",   "title": "AUIRFR3710ZTRL",   "brief": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",-  "version": "0.1.0",+  "version": "0.1.1",   "license": "CC-BY-SA-4.0",   "tags": [     "component",@@ -25,7 +25,7 @@       "symbol": "auirfr3710ztrl.kicad_sym",       "footprint": "auirfr3710ztrl.kicad_mod",       "model_3d": "auirfr3710ztrl-hero.glb",-      "model_3d_plain": "auirfr3710ztrl-etched.glb",+      "model_3d_plain": "auirfr3710ztrl.glb",       "model_3d_step": "auirfr3710ztrl-etched.step",       "model_3d_step_plain": "auirfr3710ztrl.step",       "lbr": "auirfr3710ztrl.lbr"@@ -541,9 +541,10 @@     "viewers/footprint.html",     "auirfr3710ztrl-hero.glb",     "auirfr3710ztrl-hero.overlay.json",-    "auirfr3710ztrl-etched.glb"+    "auirfr3710ztrl-etched.glb",+    "auirfr3710ztrl-etched.step"   ],-  "visibility": {-    "public": true-  }+  "visibility": "public",+  "description": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "org": "adom" }\ No newline at end of file