component
AUIRFR3710ZTRL
Public Made by Adomby adom
Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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package.json+375−4@@ -1,6 +1,6 @@ { "slug": "auirfr3710ztrl",- "version": "0.1.0",+ "version": "0.1.1", "type": "component", "description": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "tags": [@@ -29,7 +29,8 @@ "viewers/footprint.html", "auirfr3710ztrl-hero.glb", "auirfr3710ztrl-hero.overlay.json",- "auirfr3710ztrl-etched.glb"+ "auirfr3710ztrl-etched.glb",+ "auirfr3710ztrl-etched.step" ], "component": { "mpn": "AUIRFR3710ZTRL",@@ -43,7 +44,7 @@ "symbol": "auirfr3710ztrl.kicad_sym", "footprint": "auirfr3710ztrl.kicad_mod", "model_3d": "auirfr3710ztrl-hero.glb",- "model_3d_plain": "auirfr3710ztrl-etched.glb",+ "model_3d_plain": "auirfr3710ztrl.glb", "model_3d_step": "auirfr3710ztrl-etched.step", "model_3d_step_plain": "auirfr3710ztrl.step", "lbr": "auirfr3710ztrl.lbr"@@ -160,5 +161,375 @@ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)" } ]- }+ },+ "title": "AUIRFR3710ZTRL",+ "brief": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "metadata": {+ "specs": {+ "Manufacturer": "Infineon Technologies",+ "Package": "DPAK",+ "Category": "Triode/MOS Tube/Transistor",+ "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a458f80217fb137bee8170044ab28971c937c5d505c8d058f6844daf488bd5e9",+ "rows": [+ {+ "name": "Continuous Drain Current (Silicon Limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 56,+ "conditions": "TC = 25°C, VGS @ 10V (Silicon Limited)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon Limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 39,+ "conditions": "TC = 100°C, VGS @ 10V (Silicon Limited)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Package Limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "TC = 25°C, VGS @ 10V (Package Limited)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 220,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 140,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.95,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (Thermally Limited)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy Tested Value",+ "symbol": "EAS (Tested)",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "for 10 seconds (1.6mm from case)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case Thermal Resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.05,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance (PCB Mount)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "PCB mount",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "m",+ "min": null,+ "typ": 15,+ "max": 18,+ "conditions": "VGS = 10V, ID = 33A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 39,+ "typ": null,+ "max": null,+ "conditions": "VDS = 25V, ID = 33A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 100V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 100V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 69,+ "max": 100,+ "conditions": "ID = 33A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 56,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 220,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 33A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": 53,+ "conditions": "TJ = 25°C, IF = 33A, VDD = 50V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 41,+ "max": 62,+ "conditions": "di/dt = 100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "V(BR)DSS/TJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.088,+ "max": null,+ "conditions": "Reference to 25°C, ID = 1mA",+ "source_page": 2,+ "source": "datasheet"+ }+ ]+ }+ },+ "discovery_triggers": [+ "auirfr3710ztrl"+ ],+ "discovery_pitch": "AUIRFR3710ZTRL (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",+ "visibility": "public" }
page.json+7−6@@ -4,7 +4,7 @@ "slug": "auirfr3710ztrl", "title": "AUIRFR3710ZTRL", "brief": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",- "version": "0.1.0",+ "version": "0.1.1", "license": "CC-BY-SA-4.0", "tags": [ "component",@@ -25,7 +25,7 @@ "symbol": "auirfr3710ztrl.kicad_sym", "footprint": "auirfr3710ztrl.kicad_mod", "model_3d": "auirfr3710ztrl-hero.glb",- "model_3d_plain": "auirfr3710ztrl-etched.glb",+ "model_3d_plain": "auirfr3710ztrl.glb", "model_3d_step": "auirfr3710ztrl-etched.step", "model_3d_step_plain": "auirfr3710ztrl.step", "lbr": "auirfr3710ztrl.lbr"@@ -541,9 +541,10 @@ "viewers/footprint.html", "auirfr3710ztrl-hero.glb", "auirfr3710ztrl-hero.overlay.json",- "auirfr3710ztrl-etched.glb"+ "auirfr3710ztrl-etched.glb",+ "auirfr3710ztrl-etched.step" ],- "visibility": {- "public": true- }+ "visibility": "public",+ "description": "Infineon Technologies MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "org": "adom" }