component
ATM2310NSA
Public Made by Adomby adom
Agertech MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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atm2310nsa: specified limits as data (metadata.characteristics, 14 rows from the datasheet)
2 files changed
+196
README.md+21@@ -21,6 +21,27 @@ ATM2310NSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | Ta=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ | 1 |+| Continuous Drain Current | ID | | | 3 | A | Ta=25℃ | 1 |+| Pulsed Drain Current | IDM | | | 10 | A | Ta=25℃ | 1 |+| Maximum Power Dissipation | PD | | | 1 | W | Ta=25℃ | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | Ta=25℃ | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | Ta=25℃ | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 125 | ℃/W | Surface mounted on FR4 board, t≤10s (note 2) | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS =48V, VGS = 0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS =±20V, VDS = 0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS =VGS, ID =250µA; pulse test: pulse width≤300µs, duty cycle≤0.5% (note 3) | 2 |+| Drain-Source On-Resistance | RDS(on) | | | 100 | mΩ | VGS =10V, ID =2A; pulse test (note 3) | 2 |+| Drain-Source On-Resistance | RDS(on) | | | 110 | mΩ | VGS =4.5V, ID =1A; pulse test (note 3) | 2 |+ ## CAD (KiCad official) - Symbol: `ATM2310NSA`
page.json+175@@ -116,6 +116,181 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f0b552931c26d6e8",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "Surface mounted on FR4 board, t≤10s (note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =48V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS =VGS, ID =250µA; pulse test: pulse width≤300µs, duty cycle≤0.5% (note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS =10V, ID =2A; pulse test (note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "VGS =4.5V, ID =1A; pulse test (note 3)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],