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APM2701CGC-TRG-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,7 +32,7 @@ "number": "1", "name": "G1", "type": "input",- "description": "Gate of the N-channel MOSFET (Q1). VGS absolute maximum \u00b120 V; typical gate threshold 0.8 V."+ "description": "Gate of the N-channel MOSFET (Q1). VGS absolute maximum ±20 V; typical gate threshold 0.8 V." }, { "number": "2",@@ -44,13 +44,13 @@ "number": "3", "name": "G2", "type": "input",- "description": "Gate of the P-channel MOSFET (Q2). VGS absolute maximum \u00b120 V; typical gate threshold -0.8 V."+ "description": "Gate of the P-channel MOSFET (Q2). VGS absolute maximum ±20 V; typical gate threshold -0.8 V." }, { "number": "4", "name": "D2", "type": "passive",- "description": "Drain of the P-channel MOSFET (Q2). VDS absolute maximum -20 V; continuous ID -3.4 A at TA=25 \u00b0C."+ "description": "Drain of the P-channel MOSFET (Q2). VDS absolute maximum -20 V; continuous ID -3.4 A at TA=25 °C." }, { "number": "5",@@ -62,7 +62,7 @@ "number": "6", "name": "D1", "type": "passive",- "description": "Drain of the N-channel MOSFET (Q1). VDS absolute maximum 20 V; continuous ID 5.5 A at TA=25 \u00b0C."+ "description": "Drain of the N-channel MOSFET (Q1). VDS absolute maximum 20 V; continuous ID 5.5 A at TA=25 °C." } ], "provenance": {@@ -132,5 +132,8 @@ "docs/apm2701cgc-trg-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }