component
AP3003
Public Made by Adomby adom
ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ap3003: specified limits as data (metadata.characteristics, 30 rows from the datasheet)
2 files changed
+405−1
README.md+37@@ -24,6 +24,43 @@ AP3003 from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOT-23-6. Pinout and p | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-Channel) | VDS | | | 30 | V | | 1 |+| Drain-Source Voltage (P-Channel) | VDS | -30 | | | V | | 1 |+| Gate-Source Voltage (N-Channel) | VGS | -12 | | 12 | V | | 1 |+| Gate-Source Voltage (P-Channel) | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 5.8 | A | Ta =25℃ | 1 |+| Continuous Drain Current (P-Channel) | ID | -4.2 | | | A | Ta =25℃ | 1 |+| Continuous Drain Current (N-Channel) | ID | | | 3.6 | A | Ta =100℃ | 1 |+| Continuous Drain Current (P-Channel) | ID | -2.6 | | | A | Ta =100℃ | 1 |+| Pulsed Drain Current (N-Channel) | IDM | | | 23 | A | | 1 |+| Pulsed Drain Current (P-Channel) | IDM | -16.8 | | | A | | 1 |+| Power Dissipation | PD | | | 1.7 | W | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 74 | ℃/W | | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-source breakdown voltage (N-Channel) | V(BR)DSS | 30 | | | V | VGS = 0V, ID =250µA | 2 |+| Zero gate voltage drain current (N-Channel) | IDSS | | | 1 | µA | VDS =30V, VGS = 0V | 2 |+| Gate-body leakage current (N-Channel) | IGSS | -100 | | 100 | nA | VGS =±12V,VDS = 0V | 2 |+| Gate threshold voltage (N-Channel) | VGS(th) | 0.4 | 1 | 1.5 | V | VDS =VGS, ID =250µA | 2 |+| Drain-source on-resistance (N-Channel) | RDS(on) | | 24 | 38 | mΩ | VGS =4.5V, ID =5A | 2 |+| Drain-source on-resistance (N-Channel) | RDS(on) | | 35 | 58 | mΩ | VGS =2.5V, ID =1A | 2 |+| Diode Forward voltage (N-Channel) | VDS | | | 1.2 | V | VGS =0V, IS=5.8A | 2 |+| Diode Forward current (N-Channel) | IS | | | 5.8 | A | | 2 |+| Drain-source breakdown voltage (P-Channel) | V(BR)DSS | -30 | | | V | VGS = 0V, ID =-250µA | 3 |+| Zero gate voltage drain current (P-Channel) | IDSS | | | -1 | µA | VDS =-30V, VGS = 0V | 3 |+| Gate-body leakage current (P-Channel) | IGSS | -100 | | 100 | nA | VGS =±12V, VDS = 0V | 3 |+| Gate threshold voltage (P-Channel) | VGS(th) | -0.5 | -0.9 | -1.3 | V | VDS =VGS, ID =-250µA | 3 |+| Drain-source on-resistance (P-Channel) | RDS(on) | | 53 | 68 | mΩ | VGS =-4.5V, ID =-4A | 3 |+| Drain-source on-resistance (P-Channel) | RDS(on) | | 75 | 96 | mΩ | VGS =-2.5V, ID =-1A | 3 |+| Diode Forward voltage (P-Channel) | VDS | | | 1.2 | V | VGS =0V, IS=-4.2A | 3 |+| Diode Forward current (P-Channel) | IS | | | -4.2 | A | | 3 |+ ## CAD (KiCad official) - Symbol: `AP3003`
page.json+368−1@@ -166,6 +166,373 @@ "Package": "SOT-23-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "afc3cb3f080cf3a4",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.8,+ "conditions": "Ta =25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4.2,+ "typ": null,+ "max": null,+ "conditions": "Ta =25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "Ta =100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.6,+ "typ": null,+ "max": null,+ "conditions": "Ta =100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 23,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -16.8,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.7,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 74,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage (N-Channel)",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (N-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS =30V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current (N-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V,VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (N-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.4,+ "typ": 1,+ "max": 1.5,+ "conditions": "VDS =VGS, ID =250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 24,+ "max": 38,+ "conditions": "VGS =4.5V, ID =5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (N-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 35,+ "max": 58,+ "conditions": "VGS =2.5V, ID =1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward voltage (N-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS =0V, IS=5.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward current (N-Channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage (P-Channel)",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =-250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (P-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS =-30V, VGS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current (P-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±12V, VDS = 0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage (P-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.5,+ "typ": -0.9,+ "max": -1.3,+ "conditions": "VDS =VGS, ID =-250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 53,+ "max": 68,+ "conditions": "VGS =-4.5V, ID =-4A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (P-Channel)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 75,+ "max": 96,+ "conditions": "VGS =-2.5V, ID =-1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward voltage (P-Channel)",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS =0V, IS=-4.2A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward current (P-Channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4.2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -207,4 +574,4 @@ "visibility": { "public": true }-}+}