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AP2626GY-HF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+10−7@@ -32,37 +32,37 @@ "number": "1", "name": "G1", "type": "input",- "description": "Gate of MOSFET #1. VGS rated \u00b112 V; gate-source threshold VGS(th) 0.4 V min / 1.5 V max at ID = 250 \u00b5A. Drive with logic-level VGS (2.5 V or 4.5 V) to enhance the channel."+ "description": "Gate of MOSFET #1. VGS rated ±12 V; gate-source threshold VGS(th) 0.4 V min / 1.5 V max at ID = 250 µA. Drive with logic-level VGS (2.5 V or 4.5 V) to enhance the channel." }, { "number": "2", "name": "S2", "type": "passive",- "description": "Source of MOSFET #2. Connected to load return; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 \u00b0C); VSD \u2248 0.85 V typical at IS = 2.7 A."+ "description": "Source of MOSFET #2. Connected to load return; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 °C); VSD ≈ 0.85 V typical at IS = 2.7 A." }, { "number": "3", "name": "G2", "type": "input",- "description": "Gate of MOSFET #2. VGS rated \u00b112 V; gate-source threshold VGS(th) 0.4 V min / 1.5 V max at ID = 250 \u00b5A. Drive with logic-level VGS (2.5 V or 4.5 V) to enhance the channel."+ "description": "Gate of MOSFET #2. VGS rated ±12 V; gate-source threshold VGS(th) 0.4 V min / 1.5 V max at ID = 250 µA. Drive with logic-level VGS (2.5 V or 4.5 V) to enhance the channel." }, { "number": "4", "name": "D2", "type": "passive",- "description": "Drain of MOSFET #2. VDS rated 20 V max; RDS(on) 0.022 \u03a9 at VGS = 4.5 V, ID = 3.4 A. Continuous ID up to 6.0 A (TC = 25 \u00b0C), pulsed IDM = 18 A."+ "description": "Drain of MOSFET #2. VDS rated 20 V max; RDS(on) 0.022 Ω at VGS = 4.5 V, ID = 3.4 A. Continuous ID up to 6.0 A (TC = 25 °C), pulsed IDM = 18 A." }, { "number": "5", "name": "S1", "type": "passive",- "description": "Source of MOSFET #1. Connected to load return; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 \u00b0C); VSD \u2248 0.85 V typical at IS = 2.7 A."+ "description": "Source of MOSFET #1. Connected to load return; body diode anode. Continuous source-drain diode current IS = 1.17 A (TC = 25 °C); VSD ≈ 0.85 V typical at IS = 2.7 A." }, { "number": "6", "name": "D1", "type": "passive",- "description": "Drain of MOSFET #1. VDS rated 20 V max; RDS(on) 0.022 \u03a9 at VGS = 4.5 V, ID = 3.4 A. Continuous ID up to 6.0 A (TC = 25 \u00b0C), pulsed IDM = 18 A."+ "description": "Drain of MOSFET #1. VDS rated 20 V max; RDS(on) 0.022 Ω at VGS = 4.5 V, ID = 3.4 A. Continuous ID up to 6.0 A (TC = 25 °C), pulsed IDM = 18 A." } ], "provenance": {@@ -132,5 +132,8 @@ "docs/ap2626gy-hf-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }