component
AP2300
Public Made by Adomby adom
ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Control terminal of the N-channel MOSFET. VGS(TH) typ. 0.7 V (0.5-1.5 V); absolute maximum VGS = \u00b112 V. Drive to 4.5 V for RDS(on) typ. 21 m\u03a9."+ "description": "Gate. Control terminal of the N-channel MOSFET. VGS(TH) typ. 0.7 V (0.5-1.5 V); absolute maximum VGS = ±12 V. Drive to 4.5 V for RDS(on) typ. 21 mΩ." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source. Reference terminal for VGS; carries drain current to circuit ground/return. Body diode anode (source\u2192drain forward VSD typ. 0.85 V @ 2.8 A)."+ "description": "Source. Reference terminal for VGS; carries drain current to circuit ground/return. Body diode anode (source→drain forward VSD typ. 0.85 V @ 2.8 A)." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain. High-side power terminal. V(BR)DSS = 20 V, continuous ID = 5.2 A @ TC=25\u00b0C (4.0 A @ TC=100\u00b0C), pulsed IDM = 20 A. Body diode cathode."+ "description": "Drain. High-side power terminal. V(BR)DSS = 20 V, continuous ID = 5.2 A @ TC=25°C (4.0 A @ TC=100°C), pulsed IDM = 20 A. Body diode cathode." } ], "provenance": {@@ -109,5 +109,8 @@ "docs/ap2300-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }