component
AOD510-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOS control terminal; VGS(th) = 1.5-2.5 V, VGS max \u00b120 V. Drives the N-channel MOSFET on when VGS > VGS(th)."+ "description": "Gate. Insulated MOS control terminal; VGS(th) = 1.5-2.5 V, VGS max ±20 V. Drives the N-channel MOSFET on when VGS > VGS(th)." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. Power terminal of the N-channel MOSFET; VDS max = 30 V, ID = 100 A max (TC = 25 \u00b0C, package-limited to 90 A). Electrically connected to the TO-252 tab for heatsinking."+ "description": "Drain. Power terminal of the N-channel MOSFET; VDS max = 30 V, ID = 100 A max (TC = 25 °C, package-limited to 90 A). Electrically connected to the TO-252 tab for heatsinking." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Power/return terminal of the N-channel MOSFET; body diode anode (VSD \u2248 0.8 V typ. at IS = 22 A). Continuous source-drain diode current up to 90 A."+ "description": "Source. Power/return terminal of the N-channel MOSFET; body diode anode (VSD ≈ 0.8 V typ. at IS = 22 A). Continuous source-drain diode current up to 90 A." }, { "number": "4",@@ -120,5 +120,8 @@ "docs/aod510-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }