component
AO3407
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao3407: specified limits as data (metadata.characteristics, 14 rows from the datasheet)
2 files changed
+197−1
README.md+21@@ -21,6 +21,27 @@ AO3407 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracte | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -30 | V | TA=25°C | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25°C | 1 |+| Continuous Drain Current | ID | | | -4.1 | A | TA=25°C | 1 |+| Power Dissipation | PD | | | 350 | mW | TA=25°C | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | TA=25°C | 1 |+| Storage Temperature | Tstg | -55 | | 150 | ℃ | TA=25°C | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 357 | ℃/W | TA=25°C | 1 |+| Drain-source breakdown voltage | BVDSS | -30 | | | V | VGS = 0V, ID =-250µA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS =-24V, VGS = 0V | 2 |+| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS =±20V, VDS = 0V | 2 |+| Drain-source on-resistance (note 1) | RDS(on) | | | 60 | mΩ | VGS =-10V, ID =-4.1A | 2 |+| Drain-source on-resistance (note 1) | RDS(on) | | | 87 | mΩ | VGS =-4.5V, ID =-3A | 2 |+| Gate threshold voltage | VGS(th) | -1 | | -3 | V | VDS =VGS, ID =-250µA | 2 |+| Diode forward voltage (note 1) | VSD | | | -1 | V | IS=-1A, VGS=0V | 2 |+ ## CAD (KiCad official) - Symbol: `AO3407`
page.json+176−1@@ -149,6 +149,181 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "51dea2e1b5f9fd78",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4.1,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 357,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID =-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS =-24V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS =±20V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (note 1)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "VGS =-10V, ID =-4.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance (note 1)",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 87,+ "conditions": "VGS =-4.5V, ID =-3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -3,+ "conditions": "VDS =VGS, ID =-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage (note 1)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "IS=-1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +365,4 @@ "visibility": { "public": true }-}+}