component
AGMH606H
Public Made by Adomby adom
AGM Semi MOSFETs, TO-263. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+8−5@@ -32,25 +32,25 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate - control terminal for the N-channel trench MOSFET. Gate threshold voltage VGS(th) = 2.0-4.0 V (typ 2.7 V); absolute maximum VGS = \u00b120 V."+ "description": "Gate - control terminal for the N-channel trench MOSFET. Gate threshold voltage VGS(th) = 2.0-4.0 V (typ 2.7 V); absolute maximum VGS = ±20 V." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain - high-current terminal. BVDSS = 60 V; continuous ID = 80 A (Tc=25\u2103), pulsed IDM = 320 A. Electrically connected to the exposed tab of the TO-263 package."+ "description": "Drain - high-current terminal. BVDSS = 60 V; continuous ID = 80 A (Tc=25℃), pulsed IDM = 320 A. Electrically connected to the exposed tab of the TO-263 package." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source - current-return terminal for the N-channel MOSFET. Body diode is present between source (anode) and drain (cathode) with VSD \u2248 1.2 V max at IS=20 A."+ "description": "Source - current-return terminal for the N-channel MOSFET. Body diode is present between source (anode) and drain (cathode) with VSD ≈ 1.2 V max at IS=20 A." }, { "number": "4", "name": "D", "type": "passive",- "description": "Drain (exposed tab) - TO-263 metal tab, electrically identical to pin 2 (Drain). Serves as the primary thermal path (R\u03b8JC = 1.5 \u2103/W) and should be soldered to a copper pour for heat sinking."+ "description": "Drain (exposed tab) - TO-263 metal tab, electrically identical to pin 2 (Drain). Serves as the primary thermal path (RθJC = 1.5 ℃/W) and should be soldered to a copper pour for heat sinking." } ], "provenance": {@@ -120,5 +120,8 @@ "docs/agmh606h-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }