AGMH606H

@@ -0,0 +1,45 @@+# AGMH606H++**AGM Semi** · MOSFETs · TO-263++AGMH606H from AGM Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate - control terminal for the N-channel trench MOSFET. Gate threshold voltage VGS(th) = 2.0-4.0 V (typ 2.7 V); absolute maximum VGS = ±20 V. |+| 2 | D | passive | Drain - high-current terminal. BVDSS = 60 V; continuous ID = 80 A (Tc=25℃), pulsed IDM = 320 A. Electrically connected to the exposed tab of the TO-263 package. |+| 3 | S | passive | Source - current-return terminal for the N-channel MOSFET. Body diode is present between source (anode) and drain (cathode) with VSD ≈ 1.2 V max at IS=20 A. |+| 4 | D | passive | Drain (exposed tab) - TO-263 metal tab, electrically identical to pin 2 (Drain). Serves as the primary thermal path (RθJC = 1.5 ℃/W) and should be soldered to a copper pour for heat sinking. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | AGM Semi |+| Package | TO-263 |+| Category | Transistors/Thyristors |+| Pins | 4 |++## Ordering variants++Same part, different packaging or reel option.++- `AGMH606H`++## CAD (KiCad official)++- Symbol: `AGMH606H`+- Footprint: `Package_TO_SOT_SMD:TO-263-2`+- 3D model: TO-263 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603322676886843392) (None pp, sha256 `3c818eab58fced90`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/agmh606h-datasheet.pdf)

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