component
AGM15P30E
Public Made by Adomby adom
AGM Semi MOSFETs, SOT-23-3. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Control input for the P-channel MOSFET. VGS(th) = -0.4 to -1.0 V; absolute maximum VGS = \u00b110 V. Drives channel enhancement when pulled negative with respect to Source."+ "description": "Gate. Control input for the P-channel MOSFET. VGS(th) = -0.4 to -1.0 V; absolute maximum VGS = ±10 V. Drives channel enhancement when pulled negative with respect to Source." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source. Reference terminal for VGS; typically connected to the positive rail in high-side P-channel load switch configurations. Absolute maximum ID = -4.1 A continuous (Tc=25 \u00b0C)."+ "description": "Source. Reference terminal for VGS; typically connected to the positive rail in high-side P-channel load switch configurations. Absolute maximum ID = -4.1 A continuous (Tc=25 °C)." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain. Switched terminal. VDS absolute maximum = -15 V; RDS(on) = 34 m\u03a9 typ @ VGS = -4.5 V, ID = -3.5 A. Body diode is anti-parallel from Source (anode) to Drain (cathode)."+ "description": "Drain. Switched terminal. VDS absolute maximum = -15 V; RDS(on) = 34 mΩ typ @ VGS = -4.5 V, ID = -3.5 A. Body diode is anti-parallel from Source (anode) to Drain (cathode)." } ], "provenance": {@@ -114,5 +114,8 @@ "docs/agm15p30e-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }