component
4N35-000E
Public Made by Adomby adom
Broadcom Limited Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+6−3@@ -56,13 +56,13 @@ "number": "5", "name": "COLLECTOR", "type": "passive",- "description": "Collector of the output-side NPN phototransistor. Collector-emitter breakdown BVCEO = 30 V min; collector current IC = 100 mA max; VCE(sat) \u2264 0.3 V at IF = 50 mA, IC = 2 mA. CTR \u2265 100% at IF = 10 mA, VCE = 10 V."+ "description": "Collector of the output-side NPN phototransistor. Collector-emitter breakdown BVCEO = 30 V min; collector current IC = 100 mA max; VCE(sat) ≤ 0.3 V at IF = 50 mA, IC = 2 mA. CTR ≥ 100% at IF = 10 mA, VCE = 10 V." }, { "number": "6", "name": "BASE", "type": "passive",- "description": "Base of the output-side NPN phototransistor. Collector-base breakdown BVCBO = 70 V min. Usually left open (photocurrent drives base); may be tied to emitter through a resistor (e.g. RBE = 100 k\u03a9 or 500 k\u03a9) to adjust sensitivity and speed."+ "description": "Base of the output-side NPN phototransistor. Collector-base breakdown BVCBO = 70 V min. Usually left open (photocurrent drives base); may be tied to emitter through a resistor (e.g. RBE = 100 kΩ or 500 kΩ) to adjust sensitivity and speed." } ], "provenance": {@@ -160,5 +160,8 @@ "docs/4n35-000e-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }