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4N06L30-VB
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VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+45@@ -0,0 +1,45 @@+# 4N06L30-VB++**VBsemi Elec** · MOSFETs · TO-252++4N06L30-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate. Control terminal of the N-channel MOSFET; VGS(th) = 1.0-3.0 V, maximum VGS = ±20 V. Drives the channel between drain and source. |+| 2 | D | passive | Drain. Connected internally to the exposed metal tab. VDS max = 60 V; ID = 45 A at TC = 25 °C; rDS(on) = 0.025 Ω typ at VGS = 10 V. |+| 3 | S | passive | Source. Current-return terminal of the N-channel MOSFET; continuous source (body-diode) current IS = 23 A, diode VSD ≈ 1.0 V typ at IF = 15 A. |+| 4 | D (Tab) | passive | Drain tab. Large exposed heatsink pad electrically common with pin 2 (Drain). Provides the primary thermal path to the PCB (RthJC = 3.2 °C/W typ). |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | VBsemi Elec |+| Package | TO-252 |+| Category | Transistors/Thyristors |+| Pins | 4 |++## Ordering variants++Same part, different packaging or reel option.++- `4N06L30-VB`++## CAD (KiCad official)++- Symbol: `4N06L30-VB`+- Footprint: `Package_TO_SOT_SMD:TO-252-2`+- 3D model: TO-252 (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603048217294614528) (8 pp, sha256 `744aa030210e7dec`, retrieved 2026-08-17, tier: lcsc)+- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/4n06l30-vb-datasheet.pdf)
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