component
2N7002X
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2n7002x: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | 0.3 | A | TC=25℃ | 1 |+| Drain Current-Pulsed | IDM | | | 0.8 | A | Note 1 | 1 |+| Maximum Power Dissipation | PD | | | 0.85 | W | TC=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 556 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | | 145 | ℃/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | 67 | | V | VGS=0V ID=250μA | 1 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 1 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 1.3 | 3 | Ω | VGS=4.5V, ID=0.2A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 1.2 | 2.5 | Ω | VGS=10V, ID=0.3A | 2 |+| Forward Transconductance | gFS | 0.08 | | | S | VDS=10V,ID=0.2A | 2 |+| Input Capacitance | Clss | | 20 | 50 | PF | | 2 |+| Output Capacitance | Coss | | 10 | 25 | PF | | 2 |+| Reverse Transfer Capacitance | Crss | | 3.6 | 5 | PF | VDS=30V,VGS=0V, F=1.0MHz | 2 |+| Total Gate Charge | Qg | | 1.7 | 3 | nC | VDS=10V,ID=0.115A, VGS=4.5V | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=0.115A | 2 |+| Diode Forward Current | IS | | | 0.115 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `2N7002X`
page.json+260−1@@ -147,6 +147,265 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d77d5149a1898a87",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 145,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": 67,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V,VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": 3,+ "conditions": "VGS=4.5V, ID=0.2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": 2.5,+ "conditions": "VGS=10V, ID=0.3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 0.08,+ "typ": null,+ "max": null,+ "conditions": "VDS=10V,ID=0.2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Clss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 20,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 10,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "PF",+ "min": null,+ "typ": 3.6,+ "max": 5,+ "conditions": "VDS=30V,VGS=0V, F=1.0MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.7,+ "max": 3,+ "conditions": "VDS=10V,ID=0.115A, VGS=4.5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=0.115A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.115,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +447,4 @@ "visibility": { "public": true }-}+}