component
2N7002DW K72
Public Made by Adomby adom
Changjing MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2n7002dw-k72: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -24,6 +24,30 @@ | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS=0 V, ID=250 µA | 2 |+| Gate-threshold voltage | Vth(GS) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250 µA | 2 |+| Gate-body leakage | IGSS | -80 | | 80 | nA | VDS=0 V, VGS=±20 V | 2 |+| Zero gate voltage drain current | IDSS | | | 80 | nA | VDS=60 V, VGS=0 V | 2 |+| Drain-source on-resistance | RDS(on) | | 1.1 | 5 | Ω | VGS=10 V, ID=500mA | 2 |+| Drain-source on-resistance | RDS(on) | | 1.2 | 7 | Ω | VGS=5 V, ID=50mA | 2 |+| Forward transconductance | gfs | | 80 | 500 | ms | VDS=10 V, ID=200mA | 2 |+| Drain-source on-voltage | VDS(on) | | 0.5 | 3.75 | V | VGS=10V, ID=500mA | 2 |+| Drain-source on-voltage | VDS(on) | | 0.05 | 0.375 | V | VGS=5V, ID=50mA | 2 |+| Diode forward voltage | VSD | | 0.55 | 1.2 | V | IS=115mA, VGS=0 V | 2 |+| Drain-source voltage | VDS | | | 60 | V | Ta=25℃ | 1 |+| Gate-source voltage | VGS | | | 20 | V | Ta=25℃ | 1 |+| Drain current | ID | | | 115 | mA | Ta=25℃ | 1 |+| Power dissipation | PD | | | 150 | mW | Ta=25℃ | 1 |+| Junction temperature | TJ | | | 150 | ℃ | Ta=25℃ | 1 |+| Storage temperature | Tstg | -55 | | 150 | ℃ | Ta=25℃ | 1 |+| Thermal resistance from junction to ambient | RӨJA | | 833 | | ℃/W | Ta=25℃ | 1 |+ ## CAD (KiCad official) - Symbol: `2N7002DW K72`
page.json+212−1@@ -166,6 +166,217 @@ "Package": "SC-70-6(SOT-363)", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "cc0fea903950519c",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0 V, ID=250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-threshold voltage",+ "symbol": "Vth(GS)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS, ID=250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -80,+ "typ": null,+ "max": 80,+ "conditions": "VDS=0 V, VGS=±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "VDS=60 V, VGS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.1,+ "max": 5,+ "conditions": "VGS=10 V, ID=500mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": 7,+ "conditions": "VGS=5 V, ID=50mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "ms",+ "min": null,+ "typ": 80,+ "max": 500,+ "conditions": "VDS=10 V, ID=200mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-voltage",+ "symbol": "VDS(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.5,+ "max": 3.75,+ "conditions": "VGS=10V, ID=500mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-voltage",+ "symbol": "VDS(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.05,+ "max": 0.375,+ "conditions": "VGS=5V, ID=50mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.55,+ "max": 1.2,+ "conditions": "IS=115mA, VGS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 115,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from junction to ambient",+ "symbol": "RӨJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 833,+ "max": null,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -207,4 +418,4 @@ "visibility": { "public": true }-}+}